Astuti B, Abd Rahman SF, Tanikawa M, Mahmood MR, Yasui K, Manaf Hashim A. Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer. J. Nat. Scien. & Math. Res. [Internet]. 2022 Dec. 31 [cited 2025 Jun. 6];1(1):5-10. Available from: https://journal.walisongo.ac.id/index.php/JNSMR/article/view/476