Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer Download

Journal of Natural Sciences and Mathematics Research
Published by Faculty of Science and Technology
Universitas Islam Negeri Walisongo Semarang

Jl Prof. Dr. Hamka Kampus III Ngaliyan Semarang 50185
Website: https://journal.walisongo.ac.id/index.php/JNSMR
Email:jnsmr@walisongo.ac.id

ISSN: 2614-6487 (Print)
ISSN: 2460-4453 (Online)

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