Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Authors

  • Budi Astuti 1Physics Department, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang, Central Java, Indonesia
  • Shaharin Fadzli Abd Rahman Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
  • Masahiro Tanikawa 3Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
  • Mohamad Rusop Mahmood Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • Kanji Yasui Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
  • Abdul Manaf Hashim Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia

DOI:

https://doi.org/10.21580/jnsmr.2015.1.1.476

Keywords:

Silicon carbide, graphene, hot-mesh CVD

Abstract

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H2) as carrier gas. The substrate temperature, tungsten mesh temperature, H2 flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO2/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO2/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

Downloads

Download data is not yet available.

References

T. Sagii, T. Ito, Y. Furumura, M. Doki, F. Mieno, M. Maeda, J. Electrochem. Soc. 134 (1987) 2545.

D. Kurangam, T. Endo, M. Deguchi, W. Guang-Pu, H. Okamoto, Y. Hamakawa, Optoelectronics, 1 (1968) 67.

S. Miyajima, A. Yamada, and M. Konagai, Jpn. J. Appl. Phys. 46 (2007) 1415.

Q. Cheng, S. Xu, J. Long, and K. Ostrikov, Chem. Vap. Deposition, 13 (2007) 561.

S.S. Sheng, M.G. Spencer, X. Tang, P. Zhou, K. Wongtchoutgul, C. Taylor, G.L. Harris, Mater. Sci. Eng. B. 46 (1997) 147.

T. Chassagne, G. Ferro, C. Guobeyre, M. Le Berre, D. Barbier, Y. Monteil, Mater. Sci. Forum, 155 (2001) 353-356.

N.B. Strokan, A.M. Ivanov, D.V. Davydov, N.S. Savkina, E.V. Bogdanova, A.N. Kuznetsov, A.A. Lebedev, Appl. Surface Sci. 184 (2001) 455.

C. Ricciardi, E. Bennici, M. Cocuzza, P. Mandracci, D. Bich, V. Guglielmetti, G. Barucca, Thin Solid Films, 427 (2003) 178.

K.I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fundenberg, J. Hone, P. Kim, and H. L. Stomer, Solid State Commun. 146 (2008) 351.

C. Virojanadara, R. Yakimova, A.A. Zakharov, and L.I. Johanson, J. Appl. D: Appl. Phys. 43 (2010) 374010.

A. M. Hashim, and K. Yasui, J. Appl. Sci. 9 (2008) 3473.

A.M. Hashim, M. Anisuzzaman, S. Muta, T. sadoh, and M. Miyao, Jpn. J. Appl. Phys. 51 (2012) 06FF04.

T. Tsukamoto and T. Ogino, J. Phys. D: Appl. Phys. 43 (2010) 374014.

Y. Bai, G.D. Cole, M.T. Bilsara, and E.A. Fitzgerald, J. Electro. Soc. 159 (2012) H183.

K. Yasui, H. Miura, M. Takata, and T. Akahane, Thin Solid Films, 516 (2008) 644.

W. Choi, I. Lahiri, R. Seelabayina, and Y.S. Kang, Review in Solid State and Material Scinece, 35 (2010) 52.

A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscarces, D Jiang, K.S. Novoselov, S. Roth, and A.K. Geim, Phys. Rev. Lett. 97, (2006) 187401.

G. Sun, J. Ning, X. Liu, Y. Zhao, J. Li, L. Wang, W. Zhao, L. Wang, Mat. Sci. Forum. 556-557 (2007)179.

Y. Komura, A. Tabata, T. Narita, A. Kondo. Thin Solid Films, 516 (2008) 633.

T. Itoh, Y. Katoh. T. Fujiwara, K. Fukunaga, S. Nitta. Thin Solid Films. 395 (2001) 240.

S. Ulrich, T. Theel. J. Schwan, V. Batori, M. Scheib, and H. Ehrhardt, Diamond. Relat. Mat. 6 (1997) 645.

C.H. Wu, C.A. Zorman, M. Mehregany, Mat. Sci. Forum, 541 (2000) 338-342.

Y.M. Zhao, G.S. Sun, J. Ning, X.F. Liu, W.S. Zhao, L. Wang, J.M. Li, Chin. Phys. Lett. 25, (2008) 2269.

Y. Narita , K. Yasui, J. Eto, T. Kurimoto, T.Akahane, Jpn. J. Appl. Phys., 44 (2005) L809.

R. Takahashi, H. Handa, S. Abe, K. Imaizumi, H. Fukidome, A. Yoshigoe, Y. Teraoka, M. Suemitsu, Jpn. J. Appl. Phys., 50 (2011) 0701031.

J. Wasyluk, T. S. Perova, S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov, S. A. Grudinkin, Mater. Sci. Forum. 359 (2010) 645.

D.W. Feldman, J. Parker, W. Choyke, L. Patrick. Phys. Rev. 173 (1968) 787.

H. Richter, Z.P. Wang, L. Ley. Solid State Commum. 39 (1981) 625.

B. Jin and N. Shi. J. Mater. Sci. Technol. 24 (2008) 261.

T. Rajagopalan, X. Wang, B. Lahlouh, C. Ramkumar, P. Dutta, S. Gangopadhyay. J. Appl. Phys., 94 (2003) 5252.

F.Y. Huang, X.F. Wang, G.S. Sun, W.S. Zhao, Y.P. Zeng, E.L. Bian. Thin Solid Films. 484 (2005) 261.

Downloads

Published

2022-12-31

Issue

Vol. 1 No. 1 (2015): June

Section

Original Research Articles

License

Copyright

The copyright of the received article shall be assigned to the publisher of the journal. The intended copyright includes the right to publish the article in various forms (including reprints). The journal maintains the publishing rights to published articles. Authors are allowed to use their articles for any legal purposes deemed necessary without written permission from the journal, but with an acknowledgment to this journal of initial publication.

Licensing

Creative Commons License