Study of Zno:Ga Thin Film Structure With Variation of Plasma Power Using the DC Magnetron Sputtering Method

Putut Marwoto*  -  Universitas Negeri Semarang, Indonesia
Budi Astuti  -  Universitas Negeri Semarang, Indonesia
Sugianto Sugianto  -  Universitas Negeri Semarang, Indonesia

(*) Corresponding Author
DOI: 10.21580/jnsmr.2018.4.2.11017

ZnO:Ga thin films grown on a corning glass substrate by the DC Magnetron Sputtering method have been successfully grown. The purpose of this study was to study the effect of plasma power on the resulting thin film structure. The quality and structure of the films were studied using X-ray duffraction (XRD), and scanning electron microscopy (SEM). Based on XRD characterization, it was found that the ZnO:Ga thin film has a hexagonal wurtize structure on the C-axis with orientation planes (002) and (101). The quality of the resulting thin films can also be seen from the value of full-width at half maximum (FWHM) in the orientation plane (002) which increases with increasing plasma power during the growth process from 0.13°- 0.16°. The larger the FWHM value, the smaller the crystal grain size so that the structure becomes less good. This is supported by the surface morphology of the film which is less dense when the plasma power increases. ©2018 JNSMR UIN Walisongo. All rights reserved.

Keywords: ZnO:Ga thin film, structure, plasma power, DC magnetron sputtering

  1. M. Osada, T. Sakemi, T. Yamamoto, The effect of oxygen parsial pressure on local structural properties for Ga-doped ZnO thin films, Thin Solid Films, 494, 38-41, 2006.
  2. C. Huang, D. Chen, C. Hsu, Influence of deposition parameter and annealing treatment on the properties of GZO films grown using rf magnetron sputtering, Ceramics International, 38, 1057-1063, 2012.
  3. S. Kim, W.I. Lee, E.-H. Lee, S. Hwang, C. Lee, Dependence of the resistivity and the transmitance of sputter-deposited Ga-doped ZnO films on oxygen parsial pressure and sputtering temperature, Journal of materials science, 42, 4845-4849, 2007.
  4. N. Habubi, S. Chiad, S. Jabbar, W. Jabbar, Syntesis and optical properties of sprayed ZnO and ZnO:Ga thin films, Journal of the Arkansas Academy of Science, 66, 82, 2012.
  5. Balta, A.K. Ertek, O. Eker, N. & Okur, I. 2015. MgO and ZnO Composite Thin Films Using Thin Spin Coating Method on Microscope Glasses. Material Sciences and Applications. 6:40-47.
  6. Shariffudin, S.S. Mamat, M.H. & Rusop, M. 2010. Post Annealing Temperature Effect On Photoluminescence Spectroscopy of ZnO Thin Film. 2010 International Conference on Electronocs Devices System and Application (ICEDSA 2010). IEEE: 360-363.
  7. Ebrahimifard, R. Golobostanfard, M.R. Abdizadeh, H. 2014. Sol Gel Derived Al and Ga c-doped ZnO Thin Film: An Otoelectronics Study. Applied Surface Science. 290:252-259.
  8. M. Wu, S. Yu, L. He, G. Zhang, D. Ling, W. Zhang, Influence of oxygen pressure the structural, electrical and optical properties of Nb-doped ZnO thin films prepared by pulsed laser deposition, Applied Surface Science, 292, 219-224, 2014.
  9. S. Kim, W.I. Lee, E.-H. Lee, S. Hwang, C. Lee, Dependence of the resistivity and the transmitance of sputter-deposited Ga-doped ZnO films on oxygen parsial pressure and sputtering temperature, Journal of materials science, 42, 4845-4849, 2007.
  10. H.H. Shin, Y.H. Joung, S.J. Kang, Influence of the substrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition, Journal of Materials Science: Materials in Electronics, 20, 704-708, 2009.
  11. Y. Xue, H. He, Y. Jin, B. Lu, H. Cao, J. Jiang, S. Bai, Z. Ye, Effect of oxygen plasma treatment on the surface properties of Ga-doped ZnO thi films, Applied Physics A, 114, 509-513, 2013.
  12. T.P. Rao, M.S. Kumar, N.S. Hussain, Effect f thickness and atmospheric annealing on structural, electrical and optical properties of GZO thin films by spray pyrolysis, Journal of Alloys and Compounds, 541, 495-504, 2012.
  13. D.-S. Kim, J.-H. Park, S.-J. Lee, K.-J. Ahn, M.-S. Lee, M.-H. Ham, W. Lee, J.-M. Myoung, Effect of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering, Materials Science in Semiconductor Processing, 16, 997-1001, 2013.
  14. Lupan, O., T. Pauporte, L. Chow, B. Viana, F. Pelle, L.K. Ono, B.R. Cuenya, & H. Heinrich. 2010. Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium. Applied Surface Science, Vol. 256, pp.1895–1907.
  15. Ismail, A. & Abdullah, M.J. 2013. The structural and optical properties of ZnO thin films prepared at different RF sputtering power. Journal of King Saud University – Science, Vol. 25, pp.209–215.
  16. Li, Ying, Huang Qin, Xiaofang Bi. 2013. Stress Dependent Properties of Ga-Doped ZnO Thin Films Prepared by Magnetron Sputtering. Journal Mater Sci, 24. 79-84.
  17. Suchea, M., S. Christoulakis, N. Katsarakis, T. Kitsopoulos, & G. Kiriakidis. 2007. Comparative Study of Zinc Oxide and Aluminum Doped Zinc Oxide Transparent Fhin Films Grown by Direct Current Magnetron Sputtering. Elsevier. Thin Solid Films, 515, 6562-6566.
  18. J.-H. Yang, H.-S. Kim, J.-H. Lim, D.-K. Hwang, J.-Y. Oh, S.-J. Park, The effect of Ar/O2 sputtering gas on the phosphorus-doped p-Type ZnO thim films, Journal of The Electrochemical Society, 153, G242-G244, 2006.
  19. Sugianto. Zannah,R. Mahmudah, S.N. Astuti, B. Putra, N.M.D. Wibowo,A.A. Marwoto, P. Aryanto, D. & Wibowo, E. 2016. Pengaruh Temeratur Annealing Pada Sifat Listrik Film Tipis Zinc Oksida Doping Aluminium Oksida. Jurnal MIPA. 39(2): 115-122.
  20. C. periasamy, R. Prakash, & p. Chakrabarti, 2009. Effect of post annealing on structural and optical properties of ZnO thin film deposited by vacuum coating technique. J. Matel. Sci.: Mater Electron. Springer.
  21. Z. Shirui, D. Yabin, Yu Mingyan, G. Xiaolong, Xu Xinwei, J. Yupeng, & X. Yang. 2014. Microwave annealing effect on ZnO films deposited by atomic layer deposition. J. Of Semicondcutor. 35(11):1-4.
  22. Z.R. Khan, M. Zulfequar, & M.S. Khan. 2010. Optical and structural properties of thermally evaporated cadmium sulphide thin films on silicon (100) wafer. Materials Science and Engineering. B. 274: 2-3.
  23. Suryanarayana C &M.Grant Norton. 1998. X-ray Diffraction A Partical Approach. New York: plenum Press.
  24. B.S.Li, Y.C. Liu, D.Z. Shen, J.Y. Zhang, Y.M. Lu. & X.W. Fan. 2003. Effects of RF power on properties of ZnO thinfilms grown on Si(100) substrate by plasma enhanced chemical vapor deposition. J. Cryst. Growth.249:179-185.
  25. Z.R. Khan, M.S. Khan, M. Zulfequar, & M. S. Khan. 2011. Optical and structural properties of ZnO thin films fabricated by sol-gel method. Mat. Sciences and Appl. 2:340-345.
  26. P. Schall, M. Feuerbacher, M. Bartsch, U. Messerschmidt, & K. Urban. 1999. Dislocation density evolution upon plastic deformation of Al-d-Mn single quasicrystals. Hilospical Magaine Letters. 79(10):785-796.

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